EPC eGaN® FETs give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to improve system efficiency, reduce system cost, and to reduce size.
The EPC2015 FET is a 40 VDS device with a maximum RDS(ON) of 4 mΩ at 5 VGS.
The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 mΩ at 5 VGS.
This next generation of devices, in addition to many performance improvements, is in compliance with the RoHS Directive 2002/95/EC.
