SBR® technology from Diodes, Inc. utilizes a MOSFET like structure to achieve low forward voltage loss, reduced high temperature reverse leakage, and fast switching without the required control of the gate voltage. The SBR diode removes the complexity of the gate voltage circuit by making a short contact between the gate and source of the channel diode. To ensure that a weakly inverted channel still exists under the gate, the oxide thickness is reduced to an optimized level. By utilizing a CMOS ion implantation process, SBR's can be easily tuned to the appropriate VF/IR trade-off without having to select a different metal type like the Schottky diode. This allows for further flexibility and scalability of the die to meet new market demands.
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